AOK5N100 1000v,4a n-channel mosfet general description product summary v ds i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 4.2 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOK5N100l the AOK5N100 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. 1100@150 orderable part number package type tube 240 form minimum order quantity AOK5N100l to-247 green g d s top view to-247 g d s AOK5N100 symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r cs r jc maximum junction-to-case 195 1.6 avalanche current c 117 single plused avalanche energy g 235 parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range derate above 25c repetitive avalanche energy c maximum case-to-sink a 5 v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage AOK5N100 1000 tube 240 AOK5N100l to-247 green v 30 gate-source voltage 4 2.5 t c =100c a 15 pulsed drain current c continuous drain current t c =25c i d maximum junction-to-ambient a,d c power dissipation b p d v/ns -55 to 150 t c =25c thermal characteristics mj 0.64 2.8 c/w AOK5N100 units a c mj w w/c c/w 0.5 c/w 40 300 rev.1.0: december 2013 www.aosmd.com page 1 of 5 downloaded from: http:///
AOK5N100 symbol min typ max units 1000 1100 bv dss / ?tj 1.04 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 3.5 4.2 g fs 5 s v sd 0.73 1 v i s maximum body-diode continuous current 4 a i sm 15 a c iss 750 950 1150 pf c oss 40 62 85 pf c rss 3.5 6 9 pf r g 2 4.3 6.5 q g 15 19 23 nc q gs 4.6 nc q gd 6.5 nc t d(on) 27 ns t r 40 ns t d(off) 50 ns static drain-source on-resistance v gs =10v, i d =2.5a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =2.5a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =1000v, v gs =0v a bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =500v, i d =5a, r g =25 gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =800v, i d =5a dynamic parameters v ds =5v, i d =250 a v ds =800v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v d(off) t f 33 ns t rr 350 450 550 ns q rr 4.2 5.5 6.8 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =5a,di/dt=100a/ s,v ds =100v body diode reverse recovery charge i f =5a,di/dt=100a/ s,v ds =100v turn-off fall time body diode reverse recovery time a. the value of r ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =2.8a, v dd =150v, r g =25 ? , starting t j =25 c. rev.1.0: december 2013 www.aosmd.com page 2 of 5 downloaded from: http:///
AOK5N100 typical electrical and thermal characteristics 0 1.5 3 4.5 6 7.5 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 6v 10v 5.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 2.0 4.0 6.0 8.0 10.0 0 2 4 6 8 10 12 r ds(on) ( ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =10v i d =2.5a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temperature rev.1.0: december 2013 www.aosmd.com page 3 of 5 downloaded from: http:///
AOK5N100 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =800v i d =5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 10000 i d (amps) v ds (volts) 10 s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 0 1 2 3 4 5 0 25 50 75 100 125 150 current rating i d (a) t case ( c) v ds (volts) figure 10: maximum forward biased safe operating area for AOK5N100 (note f) t case ( c) figure 9: current de-rating (note b) 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOK5N100 (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.64 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.1.0: december 2013 www.aosmd.com page 4 of 5 downloaded from: http:///
AOK5N100 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev.1.0: december 2013 www.aosmd.com page 5 of 5 downloaded from: http:///
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